Shivam Patel

Birla Vishvakarma Mahavidyalaya Engineering College

ABSTRACT

Pure SnSe, 5% In, 10% In, 5% Sb, and 10% Sb doped SnSe single crystals were grown by the direct vapour transport technique. The thermoelectric power (S), dc electrical conductivity (σ), and thermal conductivity (κ) variation with temperature from ambient to 573 K substantiated the semiconducting nature of all the five samples. The sign of ‘S’ was positive for all five samples for all the temperature range stating the sample to be a p-type semiconductor. The figure of merit (ZT) variation with temperature showed that pure SnSe possesses the highest value compared to doped samples. The ZT value obtained for SnSe single crystals is 0.35 whereas in case of 5% In doped SnSe its value is 0.28 at 573 K temperature, rest other than these samples have much lesser than these values.

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