Victor Tkachenko

Institute of Nuclear Physics, Polish Academy of Sciences

ABSTRACT

In this work, we study X-ray induced melting in Si crystal, observed in the experiment performed at the Linac Coherent Light Source [1]. With our theoretical model, we identify specific processes contributing to the melting. Model predictions are then compared in detail to the measured data. In particular, it is shown that due to the spatially non-uniform beam profile, the measured X-ray scattered signal is volume integrated. It includes contributions from various crystal parts: affected by nonthermal and thermal melting, and from undamaged ones. Quantitative insight into melting processes achieved with our model can guide future experiments for high-precision processing of materials.

1. T. Pardini el al. Delayed onset of nonthermal melting in single-crystal silicon pumped with hard x rays.  Phys. Rev. Lett., 120:265701, 2018.

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